Search Results - huili (grace) xing

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Integrated Vertical Power Transistor Device
Vertical GaN field effect transistor devices are critical to the billion dollar power electronics market. Wide bandgap semiconductors offer the promise of miniaturized power supplies with higher efficiencies, however this development has been held back due to current designs which utilize large size crystalline substrates and inefficient doping pr...
Published: 8/20/2013   |   Inventor(s): Huili (Grace) Xing, Debdeep Jena, Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu
Category(s): Advanced Materials
Ultrathin Body Nitride-on-Insulator Quantum Well Field Effect Transistors
A low bandgap nitride channel (GaN) is burried between large bandgap barriers (AlN) to produce a quantum well FET. The device utilized high quality ohmic contact produced by a regrowth process. The low bandgap channel material can be optimized for specific applications (InGaN, AlGaN, etc).
Published: 11/28/2012   |   Inventor(s): Debdeep Jena, Huili (Grace) Xing, Guowang Li
Category(s): Devices
Terahertz Wave Amplitude Modulator
A device structure which utilizes layers of 2 dimensional semiconductor material to control the emission and detection of THz radiation.
Published: 11/28/2012   |   Inventor(s): Berardi Sensale-Rodriguez, Rusen Yan, Michelle Kelly, Tian Fang, Debdeep Jena, Lei Liu, Huili (Grace) Xing
Category(s): Devices
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