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Integrated Vertical Power Transistor Device
Vertical GaN field effect transistor devices are critical to the billion dollar power electronics market. Wide bandgap semiconductors offer the promise of miniaturized power supplies with higher efficiencies, however this development has been held back due to current designs which utilize large size crystalline substrates and inefficient doping pr...
Published: 8/20/2013   |   Inventor(s): Huili (grace) Xing, Debdeep Jena, Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu
Category(s): Manufacturing
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