Ultrathin Body Nitride-on-Insulator Quantum Well Field Effect Transistors

Description:
A low bandgap nitride channel (GaN) is burried between large bandgap barriers (AlN) to produce a quantum well FET.  The device utilized high quality ohmic contact produced by a regrowth process.  The low bandgap channel material can be optimized for specific applications (InGaN, AlGaN, etc).
Patent Information:
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For Information, Contact:
Tim Joyce ph
Licensing Associate
University of Notre Dame
rheller@nd.edu
Inventors:
Debdeep Jena
Huili (grace) Xing
Guowang Li
Keywords:
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