Integrated Vertical Power Transistor Device

Description:

Vertical GaN field effect transistor devices are critical to the billion dollar power electronics market.  Wide bandgap semiconductors offer the promise of miniaturized power supplies with higher efficiencies, however this development has been held back due to current designs which utilize large size crystalline substrates and inefficient doping processes.  A new FET design has resulted in a power device with low current leakage, high breakdown voltage, and capable of high frequency operation (>100 Khz).  Additionally, fabrication of these devices has been made extremely simple by avoiding multiple epitaxial regrowth steps. 

A novel, graded epitaxial layer fixed on a vertical device provides for improved device performance.  A high current device allows for the same or better power conversion in a smaller and lighter package with better efficiency.

Patent Information:
Category(s):
Advanced Materials
For Information, Contact:
Tim Joyce
Technology Commercialization Manager
University of Notre Dame
(574) 631-3029
tjoyce2@nd.edu
Inventors:
Huili (Grace) Xing
Debdeep Jena
Kazuki Nomoto
Bo Song
Mingda Zhu
Zongyang Hu
Keywords:
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