Tunnel Field Effect Transistor (TFET)-based Well Capacity Adjustment in Active Pixel Sensor (APS) for Enhanced High Dynamic Range (HDR)


Asymmetrical conduction of emerging transistors is employed to circumvent the sub-threshold operation of the reset transistor in active pixel sensors where dynamic well capacity adjustment is applied to extend the dynamic range. In current CMOS technology, this sub-threshold operation adds spatial-temporal noise on the pixel signal and gives rise to large dips in the signal-to-noise ratio. Novel transistor designs remove these undesired effects while keeping the crucial advantages of dynamic well capacity adjustment, i.e. large increase in dynamic range, simple operation, high performance under low light conditions and large pixel fill factor.

Patent Information:
Title App Type Country Serial No. Patent No. File Date Issued Date Expire Date Patent Status
PIXEL CELL HAVING A RESET DEVICE WITH ASYMMETRIC CONDUCTION Utility United States 15/220,473 7/27/2016     Abandoned
For Information, Contact:
Kunigunda Szentes
2 Stroke Manager
University of Notre Dame
Jorge Fernandez-Berni
Michael Niemier
Xiaobo Hu
Ricardo Carmona-Galan
Angel Rodriguez-Vazquez
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