Tunnel Field Effect Transistor (TFET)-based Well Capacity Adjustment in Active Pixel Sensor (APS) for Enhanced High Dynamic Range (HDR)

Description:

Asymmetrical conduction of emerging transistors is employed to circumvent the sub-threshold operation of the reset transistor in active pixel sensors where dynamic well capacity adjustment is applied to extend the dynamic range. In current CMOS technology, this sub-threshold operation adds spatial-temporal noise on the pixel signal and gives rise to large dips in the signal-to-noise ratio. Novel transistor designs remove these undesired effects while keeping the crucial advantages of dynamic well capacity adjustment, i.e. large increase in dynamic range, simple operation, high performance under low light conditions and large pixel fill factor.

Patent Information:
Category(s):
Devices
Engineering
Optics
For Information, Contact:
Tim Joyce
Licensing Associate
University of Notre Dame
(574) 631-3029
tjoyce2@nd.edu
Inventors:
Jorge Fernández-Berni
Michael Niemier
Sharon Hu
Ricardo Carmona-Galán
Ángel Rodríguez-Vázquez
Keywords:
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