Method of self-assembly for inorganic nanowires in solution into films and yarns

Description:

Nanowire yarn can now be made using a process developed at the University of Notre Dame, allowing handling and weaving processes on the macro-scale common to the textile industry or the semiconductor industry.  The solution-based process allows for self-assembly of various types of nanowires, including those made with ZnSe, CdSe, CdTe, PbS and PbSe to name a few. Assembly occurs in ambient temperatures, pressures and lighting conditions yielding yarn lengths on the order of 2.5 cm. With automation, much longer yarn lengths are anticipated. Mixed composition yarns are possible, as well as single composition yarns.  The resulting yarn is porous and may be impregnated with nanoparticles producing multifunctional materials. They may also be anchored to a substrate.

Patent Information:
Category(s):
Nanotechnology
For Information, Contact:
Tim Joyce
Technology Commercialization Manager
University of Notre Dame
(574) 631-3029
tjoyce2@nd.edu
Inventors:
Masaru (Ken) Kuno
Vladimir Plashnitsa
Nattasamon (Kae) Petchsang
Keywords:
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